PART |
Description |
Maker |
PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块) 2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块(2.584脚,512M的位寄存型的DDR - SDRAM内存模块余)
|
SIEMENS AG
|
HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM 64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM 128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD564646AL8-H HYMD564646AL8-K HYMD564646A8-H HYM |
Unbuffered DDR SDRAM DIMM 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
HB54R1G9F2-B75B HB54R1G9F2 HB54R1G9F2-10B HB54R1G9 |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HB54R1G9F2U-B75B HB54R1G9F2U HB54R1G9F2U-10B HB54R |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|